Boron Carbide Sputtering Target

Boron Carbide Sputtering Target

Purity: 99.5%
Shape: Rectangular, Disc, Tube

  • Custom sizes and standard sizes in stock
  • Competitive Price
  • Quick Lead Time

  • Boron Carbide Sputtering Target (B₄C) is a high-performance material known for its extreme hardness, chemical inertness, and resistance to wear and high temperatures. It is widely used in thin film deposition processes for producing protective coatings, optical films, and semiconductor layers. The target delivers consistent sputtering performance, making it ideal for applications that demand durability and precision in harsh environments. we can supply high-quality Boron Carbide Sputtering Target with various specifications and competitive prices, offering customized solutions to meet specific requirements.
Get A Quote

Or email us at sales@heegermaterials.com.

Boron Carbide Sputtering Target Data Sheet

Reference Code:

HTST469

Purity:

99.5%

CAS:

12069-32-8

Apparence

Black or grey, Crystalline Solid

Chemical Formula:

B₄C

Molar Mass:

55.255 g/mol

Density:

2.52 g/cm³

Melting Point:

2,763 °C (5,005 °F; 3,036 K)

Boiling Point:

3,500 °C (6,330 °F; 3,770 K)

shape:

Rectangular, Disc, Tube

Bonding Service

Unbonding or Bonding

Boron Carbide Sputtering Target

Boron Carbide Sputtering Target Powder features high purity and density, delivering reliable performance in thin film applications. Fine, low-particle characteristics ensure uniform film thickness distribution and efficient material utilization during sputtering. This powder is well-suited for producing hard, chemically resistant coatings in advanced optical and electronic devices.

Boron Carbide Sputtering Target Specifications

Circular Sputtering Targets

Diameter

1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0” up to 21”

Rectangular Sputtering Targets

Width x Length

5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness

1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0” up to 21”

Boron Carbide Sputtering Target Features

  • Extreme Hardness: Provides excellent wear resistance for durable thin film coatings.
  • High Purity: Ensures consistent sputtering performance and clean film deposition.
  • Thermal Stability: Performs reliably under high-temperature processing conditions.
  • Chemical Inertness: Suitable for use in corrosive or reactive environments.
  • Uniform Erosion Profile: Supports stable and even film thickness over time.

Boron Carbide Sputtering Target Applications

  • Nuclear Radiation Shielding: Used in the fabrication of thin films for neutron-absorbing barriers in nuclear reactors.
  • Control Rod Coatings: Applied to create surface layers in control rods, enhancing neutron absorption efficiency.
  • Shutdown Pellet Films: Utilized in thin films for emergency shutdown systems in nuclear facilities.
  • Protective Optical Coatings: Used in optics where high hardness and radiation resistance are required.
  • Semiconductor Components: Suitable for producing hard, chemically stable layers in semiconductor processing.
  • Bulletproof Plate
    Bulletproof Plate
  • Ceramic Bulletproof plates for tank
    Ceramic Bulletproof plates for tank
  • waterjet cutting HM
    Waterjet cutting
  • Boron Carbide for grinding
    Boron Carbide for grinding

Boron Carbide Material Properties

Property

Value

Chemical Formula

B4C

Density

2.51 g/cm3

Color

Black or dark grey

Crystal Structure

Hexagonal

Water Absorbtion

ng %@R.T.

Hardness

9.5 Mohs

Hardness

ng knoop (kg/mm2)

Property

Value

Compressive Strength

2.9 MPa @ R.T.

Tensile Strength

155 MPa @ R.T.

Modulus of Elasticity

445 GPa

Flexural Strength (MOR)

375 MPa @ R.T.

Poisson’s Ratio, ν

0.19

Fracture Toughness, K_IC

ng MPa x m^(1/2)

Property

Value

Max. Use Temperature

2450 °C

Thermal Shock Resistance

ng ΔT (°C)

Thermal Conductivity

28 W/m-K @ R.T.

Coefficient of Linear Expansion

5.54 μm/m-°C (~25°C through ±1000°C)

Specific Heat, Cp

945 cal/g-°C @ R.T.

Boron Carbide Material Grades

Reaction bonded boron carbide (B4C) is primarily used ballistic armor, providing excellent protection while reducing weight as compared to other armor materials.

Properties

Units

Reaction Bonded
Boron Carbide

Flexural Strength, MOR (20 °C)

MPa

250

Fracture Toughness, KIc

MPa m1/2

3.0 – 4.0

Thermal Conductivity (20 °C)

W/m K

50

Coefficient of Thermal Expansion

1×10-6/°C

4.5

Maximum Use Temperature

°C

1000

Dielectric Strength (6.35mm)

ac-kV/mm

—

Dielectric Loss (tan δ)

1MHz, 25 °C

—

Volume Resistivity (25°C)

Ω-cm

10³

Reaction Bonded B4C Advantages:

  • High strength
  • High hardness
  • Cost-effective
  • Suitable for large-scale applications

Hot-pressed, also known as pressure assisted densified (PAD), boron carbide is one of the hardest materials available in commercial shapes. This exceptional hardness combined with low density is used in ballistic armor, maximizing protection while minimizing weight.

Properties

Units

Hot Pressed
Boron Carbide

Flexural Strength, MOR (20 °C)

MPa

320 – 450

Fracture Toughness, KIc

MPa m1/2

3.0 – 4.0

Thermal Conductivity (20 °C)

W/m K

45 – 100

Coefficient of Thermal Expansion

1×10-6/°C

4.5 – 4.9

Maximum Use Temperature

°C

2000

Dielectric Strength (6.35mm)

ac-kV/mm

—

Dielectric Loss (tan δ)

1MHz, 25 °C

—

Volume Resistivity (25°C)

Ω-cm

100

Hot Pressed B4C Advantages:

  • Higher density
  • Better mechanical properties
  • Ideal for high-strength, high-temperature engineering materials

Pressureless sintered boron carbide combines high purity and the excellent mechanical properties of boron carbide for use in both ballistic armor and semiconductor manufacturing.

Properties

Units

Sintered
Boron Carbide

Flexural Strength, MOR (20 °C)

MPa

450

Fracture Toughness, KIc

MPa m1/2

3.0 – 5.0

Thermal Conductivity (20 °C)

W/m K

43 – 100

Coefficient of Thermal Expansion

1×10-6/°C

4.5 – 4.9

Maximum Use Temperature

°C

—

Dielectric Strength (6.35mm)

ac-kV/mm

—

Dielectric Loss (tan δ)

1MHz, 25 °C

—

Volume Resistivity (25°C)

Ω-cm

10

Pressureless Sintered B4C Advantages:

  • High hardness
  • Excellent wear resistance
  • High chemical stability
  • Low density
  • Good thermal stability

Boron Carbide Ceramic Machining

Ceramic Machining HM

Boron Carbide Ceramic machining is a demanding process used to shape this ultra-hard ceramic into precise components for technical applications. Due to its exceptional hardness and brittleness, machining boron carbide requires specialized tools and careful control to prevent cracking or surface damage. While the material can be shaped more easily in its green or biscuit state, achieving tight tolerances often requires machining after full sintering, which involves diamond-based techniques. The common machining methods include:

  • Diamond Cutting: Diamond-coated tools are essential for cutting fully sintered boron carbide, enabling accurate shaping and smooth surface finishes.
  • Precision Grinding: Used to achieve fine tolerances and clean finishes. This process is slow and requires careful handling to avoid micro-cracks or structural damage.
  • Ultrasonic Machining: Applies high-frequency vibrations with abrasive slurry to remove material gently, suitable for intricate and delicate shapes.
  • Laser Cutting: A non-contact technique effective for pre-sintered material or thin sections, offering clean edges with minimal thermal stress.
  • Green Machining: Carried out before sintering, allowing easier shaping of complex geometries. However, post-sintering shrinkage (~20%) must be accounted for in final dimensions.

Boron Carbide Ceramic Packaging

Boron Carbide ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.

ceramic products packing HM

Download

Get A Quote

We will check and get back to you in 24 hours

To customize your Boron Carbide Sputtering Target, please provide the following details:

  • Dimensions: Length, Width, Diameter, Thickness, etc.
  • Shape: Rectangular, round, or tube.
  • Tolerances: Specify the required tolerances.
  • Purity of the sputtering target
  • Application: Indicate the intended application or industry.
  • Backing Plate: If bonding service is required, please specify the material and dimensions of the backing plate.
  • Quantity of the products you need
  • Alternatively, you can provide a drawing with your specifications.

Once we have these details, we can provide you with a quote within 24 hours.

We carry a wide variety of boron nitride products in stock, and for these, there is generally no minimum order requirement. However, for custom orders, we typically set a minimum order value of $200. The lead time for stock items is usually 1-2 weeks, while custom orders usually take 3-4 weeks, depending on the specifics of the order.

Because of its extreme hardness, high chemical stability, and excellent neutron absorption capability, making it ideal for producing protective, durable, and radiation-resistant thin films.

  • Nuclear energy (shielding and control components)
  • Defense and aerospace (radiation protection films)
  • Semiconductor fabrication (hard coatings)
  • Optoelectronics (abrasion-resistant layers)
  • Scientific research (neutron absorption films)

Advanced Ceramic Hub, established in 2016 in Colorado, USA, is a specialized supplier and manufacturer of graphene products. With extensive expertise in supply and export, we offer competitive pricing and customized solutions tailored to specific requirements, ensuring outstanding quality and customer satisfaction. As a professional provider of ceramics, refractory metals, specialty alloys, spherical powders, and various advanced materials, we serve the research, development, and large-scale industrial production needs of the scientific and industrial sectors.

Boron Carbide Sputtering Target

Related Products

Leave a Reply

Your email address will not be published. Required fields are marked *