Silicon Carbide Plate/Sheet/Disc
Silicon Carbide Plate/Sheet/Disc
Purity: 97% – 99%
Silicon Carbide Plate/Sheet/Disc is an advanced ceramic material with exceptional hardness, thermal stability, and chemical resistance. It is widely used in semiconductor manufacturing, ballistic armor, high-temperature furnace components, aerospace, mechanical seals, and precision optics. As a leading supplier and manufacturer of premium silicon carbide products, we can supply high-quality silicon carbide plates, sheets, and discs with various specifications and competitive prices, offering customized solutions to meet specific requirements.
Or email us at sales@heegermaterials.com.Silicon Carbide Plate/Sheet/Disc Data Sheet
| Reference Code: | HM2577 |
| Purity: | 97% – 99% |
| Color: | Black or Dark grey |
| Chemical Formula: | SiC |
| Material Grades: | Reaction Bonded SiC, Pressureless Sintered SiC, Hot-pressed SiC, etc. |
| Density: | >3.2 g/cm³ |
| Maximum Operating Temperature: | 1500°C |
| Thermal Conductivity: | 120 W/m·K |
Silicon Carbide Plate/Sheet/Disc Description
Silicon Carbide Plate/Sheet/Disc has superior wear resistance, high thermal conductivity, and lightweight properties, making it an ideal choice under extreme conditions. It is widely used in semiconductor manufacturing, ballistic armor, high-temperature furnace components, aerospace, etc. Advanced Ceramics Hub can supply high-precision silicon carbide plates/sheets/discs with customized solutions to meet diverse industry and research applications.
Silicon Carbide Plate Silicon Carbide Sheet Silicon Carbide Sheet Silicon Carbide Disc
Silicon Carbide Plate/Sheet/Disc Specifications
| Item | Specifications/Options |
|---|---|
| Size | 300x300x10mm, 400x400x15mm, 500x500x20mm, or customized. |
| Shape | Square, Round, Rectangular, etc. |
| Thickness Options | Ultra-thin (e.g., less than 5mm), Standard thickness (5-20mm), Thick plates (above 20mm) |
| Hole Type | Solid plates, Round hole plates, Square hole plates, Mesh plates, etc. |
| Edge Design | Straight edge plates, Chamfered edge plates, Rounded edge plates, etc. |
| Surface Features | Smooth flat plates, Textured surface, Anti-slip surface |
Silicon Carbide Plate/Sheet/Disc Features
- High temperature resistance
- Exceptional hardness and wear resistance
- Outstanding thermal conductivity and shock resistance
- Chemical inertness in corrosive environments
- Low thermal expansion
- Lightweight
Silicon Carbide Plate/Sheet/Disc Manufacturing Process
- Raw Material Preparation: Blend high-purity SiC powder with additives (e.g., carbon, boron).
- Forming: Shape into plates/sheets/discs via dry pressing, slip casting, or isostatic pressing.
- Green Machining (Optional): Machine the green body for near-final shape.
- Sintering: Heat at 1,800–2,200°C using pressureless sintering, hot pressing, or reaction bonding
- .Post-Sintering Machining: Grind/polish with diamond tools for precise dimensions.
- Surface Treatment (Optional): Polish or apply coatings for specific applications.
- Quality Control: Inspect dimensions, hardness, density, and defects.
Silicon Carbide Plate/Sheet/Disc Applications
- Semiconductor Manufacturing: Used as wafer carriers, substrates, or components in semiconductor processing equipment due to high thermal conductivity and resistance to harsh chemical environments.
- Armor and Ballistic Protection: Employed in body armor, vehicle armor, and bulletproof vests for their lightweight and high strength.
- High-Temperature Components: Utilized in kiln furniture, furnace linings, and heat exchangers due to excellent thermal shock resistance and stability at high temperatures.
- Aerospace and Defense: Applied in turbine blades, nozzles, and structural components for their durability and lightweight properties.
- Mechanical Seals and Bearings: Used in pumps and rotating equipment for their wear resistance and low friction.
- Optics and Mirrors: Employed in precision optics and laser mirrors due to their high stiffness and polishability.
- Cutting Tools and Abrasives: Incorporated in grinding wheels, cutting discs, and abrasive tools for their extreme hardness.
- Energy Applications: Used in solar panel production and as components in nuclear reactors for their radiation resistance.
Silicon Carbide Material Properties
Silicon Carbide Material Grades
Reaction bonded silicon carbide (RBSiC) is made by mixing SiC, carbon, and binder, then infiltrating with silicon at high temperature. The vapor-phase method reduces free silicon to under 10%, improving performance. The result is a silicon-silicon carbide composite (SiSiC), not pure SiC.
SiC powder + C powder + binder mixed → forming → drying → protective atmosphere for degassing → high-temperature silicon infiltration → post-processing.
Reaction Bonded SiC Advantages:
- Low sintering temperature
- Low production cost
- High material densification
- Carbon and silicon carbide framework can be pre-machined into any shape
- Shrinkage during sintering is within 3%, aiding dimension control
- Significant reduction in the need for finishing, ideal for large, complex components
Reaction Bonded SiC Disadvantages:
- Residual free silicon in the sintered body after processing
- Reduced strength compared to products from other processes
- Decreased wear resistance
- Free silicon is not resistant to corrosion from alkaline substances and strong acids (e.g., hydrofluoric acid)
- Limited usage due to corrosion susceptibility
- High-temperature strength is impacted by free silicon
- Typical usage temperature is limited to below 1350-1400°C
Pressureless sintered silicon carbide refers to the densification sintering of samples with varying shapes and sizes at 2000–2150°C without applying external pressure and using an inert gas atmosphere, by incorporating suitable sintering additives. The sintering process can be categorized into solid-phase sintering (SSiC) and liquid-phase sintering (LSiC).
Solid-Phase Sintering SiC (SSiC) Properties:
- High Sintering Temperature: Requires a high sintering temperature (>2000°C).
- High Purity Requirement: The raw materials must be of high purity.
- Low Fracture Toughness: The sintered body has lower fracture toughness and tends to undergo transgranular fracture.
- Clean Grain Boundaries: There is essentially no liquid phase, and the grain boundaries are relatively “clean.”
- Stable High-Temperature Strength: High-temperature strength remains stable up to 1600°C without significant changes.
- Grain Growth: At high temperatures, grain growth is easy, leading to poor grain uniformity.
- High Crack Sensitivity: The material is highly sensitive to crack strength.
Liquid-Phase Sintering SiC (LSiC) Properties:
- Lower Sintering Temperature: Compared to solid-state sintering, the sintering temperature is lower.
- Smaller Grain Size: The grain size is smaller, with better uniformity of grains.
- Improved Fracture Toughness: Due to the introduction of a liquid phase at the grain boundaries, the fracture mode shifts to intergranular fracture, significantly improving fracture toughness.
- Additive Influence: Uses multi-component eutectic oxides (e.g., Y2O3-Al2O3) as sintering additives, promoting densification.
- Reduced Crack Sensitivity: Liquid-phase sintering reduces the material’s sensitivity to crack strength.
- Weakened Interface Bonding: The introduction of the liquid phase weakens the bonding strength at the grain boundaries.
Pressureless sintered boron carbide combines high purity and the excellent mechanical properties of boron carbide for use in both ballistic armor and semiconductor manufacturing.
Hot-Pressed SiC Advantages:
- Enables sintering at lower temperatures and shorter times, resulting in fine grains, high relative density, and good mechanical properties.
- The simultaneous heating and pressing facilitate particle contact diffusion and mass transfer.
- Suitable for producing silicon carbide ceramics with good mechanical performance.
Hot-Pressed SiC Disadvantages:
- The equipment and process are complex.
- High demands on mold material.
- Limited to producing simple-shaped parts.
- Low production efficiency.
- High production costs.
Recrystallized Silicon Carbide (RSiC) is a pure silicon carbide ceramic made via high-temperature evaporation-condensation, with a porous, high-strength structure, offering excellent heat, corrosion, and thermal shock resistance, used in kiln furniture, nozzles, and chemical components.
Recrystallized SiC Properties & Applications:
- The sintering process, based on evaporation-condensation, doesn’t cause shrinkage, preventing deformation or cracking.
- RSiC can be shaped through methods like casting, extrusion, and pressing, and its shrinkage-free firing allows for precise dimensions.
- After firing, recrystallized RSiC contains 10%-20% residual porosity, primarily influenced by the green body’s porosity, providing a foundation for porosity control.
- The sintering mechanism creates interconnected pores, making RSiC suitable for applications in exhaust and air filtration.
- RSiC has clean grain boundaries, free from glass and metal impurities, ensuring high purity and retaining SiC’s superior properties for demanding high-performance applications.
Hot Isostatic Pressed Silicon Carbide (HIPSiC) is a high-performance ceramic produced via hot isostatic pressing. Under high temperature (around 2000 ℃) and uniform high-pressure gas (typically argon), silicon carbide powder is densified into a nearly pore-free structure.
Hot Isostatic Pressed SiC Advantages:
- Uniform mictrostructure and fine grain size
- Low sintering temperature and time
- High density
- High purity and component control
Hot Isostatic Pressed SiC Disadvantages:
- Difficult packaging technology
- High initial investment and operational costs
- Limited for large or complex shapes
Spark Plasma Sintering Silicon Carbide is a high-performance ceramic produced using spark plasma sintering technology. This process employs pulsed current and pressure to rapidly density silicon carbide powder at relatively low temperatures (around 1800-2000 ℃) in a short time.
Spark Plasma Sintering SiC Properties:
- Faster heating rate
- Lower sintering temperature
- Shorter sintering time
- Fine and uniform grains
- High density
- Appliable for small and precision parts
Silicon Carbide Ceramic Machining
Silicon Carbide (SiC) is a highly durable ceramic material with extreme hardness (9.5 Mohs), thermal stability (up to 1650 ℃), and resistance to wear, corrosion, and high temperatures. However, machining silicon carbide presents challenges due to its extreme hardness and brittleness. Specialized techniques and tools are required to achieve precise cuts and shapes. The common machining methods include:
- Diamond Grinding: Diamond tools are used to achieve smooth surfaces and precise shapes.
- Laser Cutting: Suitable for cutting thin SiC materials. Laser cutting offers high precision and minimal material waste.
- Ultrasonic Machining: This method uses high-frequency vibrations to cut and shape brittle materials like SiC without causing cracks.
- Electrical Discharge Machining (EDM): A non-traditional method that uses electrical sparks to remove material, effective for hard ceramics like SiC.
- Grinding With CBN Tools: Cubic boron nitride (CBN) tools can be used for grinding SiC, providing an alternative to diamond grinding for certain applications.
- Water Jet Cutting: Using a high-pressure jet of water, sometimes with abrasive particles, to cut through SiC. This method is useful for cutting complex shapes.
Silicon Carbide Ceramic Packaging
Silicon Carbide ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.
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