Silicon Carbide Rod/Bar
Silicon Carbide Rod/Bar
Purity: ≥99%
Silicon Carbide Rod/Bar is made from high-purity silicon carbide (SiC), offering excellent thermal stability, electrical conductivity, chemical stability, and mechanical strength. It is widely used in high-temperature, high-pressure, corrosion-resistant, and electronic industries. As a leading supplier and manufacturer of premium silicon carbide products, we can supply high-quality silicon carbide rods and bars with various specifications and competitive prices, offering customized solutions to meet specific requirements.
Or email us at sales@heegermaterials.com.Silicon Carbide Rod/Bar Data Sheet
| Reference Code: | HM2581 |
| Purity: | ≥99% |
| Color: | Black or Dark grey |
| Chemical Formula: | SiC |
| Material Grades: | Reaction Bonded SiC, Pressureless Sintered SiC, Hot-pressed SiC, etc. |
| Density: | >3.2 g/cm³ |
| Maximum Operating Temperature: | 1500°C |
| Thermal Conductivity: | 120-200 W/m·K |
Silicon Carbide Rod/Bar Description
Silicon Carbide (SiC) primarily exists in two crystal structures: the cubic β-SiC and the hexagonal α-SiC. Compared to other ceramics such as alumina (Al2O3) and boron carbide (B4C), SiC exhibits superior mechanical properties, better oxidation resistance, higher wear resistance, and a lower friction coefficient. Silicon Carbide Rod/Bar is made from high-purity silicon carbide (SiC), possessing exceptional thermal stability, electrical conductivity, chemical stability, and mechanical strength. These excellent properties make it widely used in semiconductor applications, photovoltaic power generation, heating elements, and various industrial furnaces. Advanced Ceramics Hub can supply high-precision silicon carbide rods with customized solutions for diverse industry and research applications.
Silicon Carbide Rod Silicon Carbide Bar
Silicon Carbide Rod/Bar Features
- High-Temperature Stability: Can operate stably above 1600°C with excellent oxidation resistance.
- High Thermal Conductivity: Enables rapid heating and cooling, improving energy efficiency.
- Exceptional Mechanical Strength: Extreme hardness (Mohs 9.5) ensures wear and pressure resistance.
- Chemical Corrosion Resistance: Resists acids, alkalis, and molten metals, ideal for harsh environments.
- Adjustable Electrical Resistivity: Suitable for heating elements and semiconductor applications.
- Energy-Efficient & Eco-Friendly: >90% thermal efficiency reduces power consumption.
- Low Thermal Expansion: Maintains dimensional stability under extreme temperature changes.
Silicon Carbide Rod/Bar Applications
- High-Temperature Heating Elements: Used as heating elements in industrial furnaces, ceramic sintering, and metal heat treatment.
- Semiconductor Manufacturing: Serve as support materials or heating elements in high-temperature reactors for wafer growth and chip production.
- Abrasives and Cutting Tools: Utilized in grinding wheels, sandpaper, and cutting tools for processing metals and ceramics.
- Refractory Materials: Used to produce high-temperature and corrosion-resistant refractory bricks and furnace linings for metallurgy and chemical industries.
- Electronic Devices: Act as substrate materials for high-power, high-frequency devices like MOSFETs and Schottky diodes.
- Aerospace: Applied in high-temperature structural components, such as turbine blades and thermal protection systems.
Silicon Carbide Material Properties
Silicon Carbide Material Grades
Reaction bonded silicon carbide (RBSiC) is made by mixing SiC, carbon, and binder, then infiltrating with silicon at high temperature. The vapor-phase method reduces free silicon to under 10%, improving performance. The result is a silicon-silicon carbide composite (SiSiC), not pure SiC.
SiC powder + C powder + binder mixed → forming → drying → protective atmosphere for degassing → high-temperature silicon infiltration → post-processing.
Reaction Bonded SiC Advantages:
- Low sintering temperature
- Low production cost
- High material densification
- Carbon and silicon carbide framework can be pre-machined into any shape
- Shrinkage during sintering is within 3%, aiding dimension control
- Significant reduction in the need for finishing, ideal for large, complex components
Reaction Bonded SiC Disadvantages:
- Residual free silicon in the sintered body after processing
- Reduced strength compared to products from other processes
- Decreased wear resistance
- Free silicon is not resistant to corrosion from alkaline substances and strong acids (e.g., hydrofluoric acid)
- Limited usage due to corrosion susceptibility
- High-temperature strength is impacted by free silicon
- Typical usage temperature is limited to below 1350-1400°C
Pressureless sintered silicon carbide refers to the densification sintering of samples with varying shapes and sizes at 2000–2150°C without applying external pressure and using an inert gas atmosphere, by incorporating suitable sintering additives. The sintering process can be categorized into solid-phase sintering (SSiC) and liquid-phase sintering (LSiC).
Solid-Phase Sintering SiC (SSiC) Properties:
- High Sintering Temperature: Requires a high sintering temperature (>2000°C).
- High Purity Requirement: The raw materials must be of high purity.
- Low Fracture Toughness: The sintered body has lower fracture toughness and tends to undergo transgranular fracture.
- Clean Grain Boundaries: There is essentially no liquid phase, and the grain boundaries are relatively “clean.”
- Stable High-Temperature Strength: High-temperature strength remains stable up to 1600°C without significant changes.
- Grain Growth: At high temperatures, grain growth is easy, leading to poor grain uniformity.
- High Crack Sensitivity: The material is highly sensitive to crack strength.
Liquid-Phase Sintering SiC (LSiC) Properties:
- Lower Sintering Temperature: Compared to solid-state sintering, the sintering temperature is lower.
- Smaller Grain Size: The grain size is smaller, with better uniformity of grains.
- Improved Fracture Toughness: Due to the introduction of a liquid phase at the grain boundaries, the fracture mode shifts to intergranular fracture, significantly improving fracture toughness.
- Additive Influence: Uses multi-component eutectic oxides (e.g., Y2O3-Al2O3) as sintering additives, promoting densification.
- Reduced Crack Sensitivity: Liquid-phase sintering reduces the material’s sensitivity to crack strength.
- Weakened Interface Bonding: The introduction of the liquid phase weakens the bonding strength at the grain boundaries.
Pressureless sintered boron carbide combines high purity and the excellent mechanical properties of boron carbide for use in both ballistic armor and semiconductor manufacturing.
Hot-Pressed SiC Advantages:
- Enables sintering at lower temperatures and shorter times, resulting in fine grains, high relative density, and good mechanical properties.
- The simultaneous heating and pressing facilitate particle contact diffusion and mass transfer.
- Suitable for producing silicon carbide ceramics with good mechanical performance.
Hot-Pressed SiC Disadvantages:
- The equipment and process are complex.
- High demands on mold material.
- Limited to producing simple-shaped parts.
- Low production efficiency.
- High production costs.
Recrystallized Silicon Carbide (RSiC) is a pure silicon carbide ceramic made via high-temperature evaporation-condensation, with a porous, high-strength structure, offering excellent heat, corrosion, and thermal shock resistance, used in kiln furniture, nozzles, and chemical components.
Recrystallized SiC Properties & Applications:
- The sintering process, based on evaporation-condensation, doesn’t cause shrinkage, preventing deformation or cracking.
- RSiC can be shaped through methods like casting, extrusion, and pressing, and its shrinkage-free firing allows for precise dimensions.
- After firing, recrystallized RSiC contains 10%-20% residual porosity, primarily influenced by the green body’s porosity, providing a foundation for porosity control.
- The sintering mechanism creates interconnected pores, making RSiC suitable for applications in exhaust and air filtration.
- RSiC has clean grain boundaries, free from glass and metal impurities, ensuring high purity and retaining SiC’s superior properties for demanding high-performance applications.
Hot Isostatic Pressed Silicon Carbide (HIPSiC) is a high-performance ceramic produced via hot isostatic pressing. Under high temperature (around 2000 ℃) and uniform high-pressure gas (typically argon), silicon carbide powder is densified into a nearly pore-free structure.
Hot Isostatic Pressed SiC Advantages:
- Uniform mictrostructure and fine grain size
- Low sintering temperature and time
- High density
- High purity and component control
Hot Isostatic Pressed SiC Disadvantages:
- Difficult packaging technology
- High initial investment and operational costs
- Limited for large or complex shapes
Spark Plasma Sintering Silicon Carbide is a high-performance ceramic produced using spark plasma sintering technology. This process employs pulsed current and pressure to rapidly density silicon carbide powder at relatively low temperatures (around 1800-2000 ℃) in a short time.
Spark Plasma Sintering SiC Properties:
- Faster heating rate
- Lower sintering temperature
- Shorter sintering time
- Fine and uniform grains
- High density
- Appliable for small and precision parts
Silicon Carbide Ceramic Machining
Silicon Carbide (SiC) is a highly durable ceramic material with extreme hardness (9.5 Mohs), thermal stability (up to 1650 ℃), and resistance to wear, corrosion, and high temperatures. However, machining silicon carbide presents challenges due to its extreme hardness and brittleness. Specialized techniques and tools are required to achieve precise cuts and shapes. The common machining methods include:
- Diamond Grinding: Diamond tools are used to achieve smooth surfaces and precise shapes.
- Laser Cutting: Suitable for cutting thin SiC materials. Laser cutting offers high precision and minimal material waste.
- Ultrasonic Machining: This method uses high-frequency vibrations to cut and shape brittle materials like SiC without causing cracks.
- Electrical Discharge Machining (EDM): A non-traditional method that uses electrical sparks to remove material, effective for hard ceramics like SiC.
- Grinding With CBN Tools: Cubic boron nitride (CBN) tools can be used for grinding SiC, providing an alternative to diamond grinding for certain applications.
- Water Jet Cutting: Using a high-pressure jet of water, sometimes with abrasive particles, to cut through SiC. This method is useful for cutting complex shapes.
Silicon Carbide Ceramic Packaging
Silicon Carbide ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.
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