Silicon Nitride Substrate

Silicon Nitride substrate

Silicon Nitride Substrate

Purity: ≥99%

  • Custom sizes and standard sizes in stock
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  • Competitive Price
  • Silicon nitride substrate is sintered at 2000°C using a specialized formula and process. It offers exceptional thermal stability, making it ideal for third-generation semiconductor devices requiring high heat dissipation and reliable packaging. With excellent electrical insulation and mechanical strength, this substrate ensures long-lasting performance in demanding applications such as power electronics and high-performance microelectronic devices. We can supply high-quality silicon nitride substrate in a variety of specifications and at competitive prices, offering customized solutions to meet specific requirements.

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Silicon nitride substrate data sheet

Reference code:

HM2560

Purity:

≥99%

Color:

Black-gray

Chemical formula:

Si3N4

Material grades:

HMSN1000, HMSN2000, HMSN3000, HMSN4000

Density:

3.20 g/cm3

Description of the silicon nitride substrate

Silicon nitride substrate is a high-performance material designed for advanced applications in the electronics and semiconductor industries. Known for its exceptional thermal stability, high strength, and excellent electrical insulation properties, this substrate is ideal for use in devices requiring efficient heat dissipation and reliable electrical insulation. It is sintered at high temperatures to achieve a dense structure, ensuring durability in demanding environments. Silicon nitride substrates are commonly used in power electronics, high-temperature sensors, and as substrates for third-generation semiconductors, where heat management and electrical insulation are crucial.

Silicon nitride substrate specifications

ProductThicknessLength×Width
Si3N4 substrate0.254 mm190.0×138.0 mm (±1%)
0.320 mm
0.635 mm
1,000 mm114.3×114.3 mm (±1%)

Characteristics of the silicon nitride substrate

  • High thermal conductivity:  Offers excellent heat dissipation performance, with values ​​up to 70 W/mK, significantly higher than traditional alumina substrates .
  • Thermal expansion compatibility:  The coefficient of thermal expansion (3.1×10-⁶/°C) is very similar to that of silicon chips, reducing thermal stress and improving reliability.
  • Superior mechanical strength:  Provides twice the flexural strength of alumina substrates, making it more resistant to cracking under mechanical load.
  • Exceptional electrical insulation:  Maintains high insulation resistance and low dielectric loss, ideal for high voltage and high frequency applications.
  • Excellent thermal shock resistance:  Can withstand rapid temperature cycles from 0 to 200 °C for thousands of cycles without degrading.
  • Chemical and oxidation resistance:  Resists acids, alkalis and oxidation, ensuring a lifespan of up to 10 years in harsh environments.
  • Good metallization compatibility:  Supports multilayer circuits and miniaturized packaging and is suitable for compact and integrated designs.

Applications of silicon nitride substrate

  • Power electronics:  Used as substrates for IGBT and MOSFET modules, they offer effective heat dissipation and electrical insulation in high-power applications.
  • Automotive electronics:  Ideal for electric vehicle inverters, LED control units and ECU systems thanks to its thermal stability and mechanical strength.
  • Aerospace systems:  Supports highly reliable electronic components that must withstand extreme thermal and mechanical stresses.
  • Renewable energy equipment:  Applied in wind turbines and solar inverters, where long-term thermal cycling and electrical insulation are critical.
  • Industrial automation:  Integrated into control and drive systems that require durable and heat-resistant circuit substrates.

Silicon Nitride Material Properties

Property

Unit

HMSN1000

HMSN2000

HMSN3000

HMSN4000

Density

g/cm3

3.18-3.40

3.18-3.40

3.18-3.26

3.23

Compressive Strength

MPa

3000

3000

3000

3000

Flexural Strength @ 25°C

MPa

730

970

760-830

850

Weibull-Modulus m

18

20

12

18

Fracture Toughness KIc

MPa m1/2

7

6.2

6.2-6.5

8.5

Young‘s Modulus

GPa

300

300

300-310

320

Poisson’s Ratio

0.26

0.26

0.26

0.28

Hardness

GPa

15

15

15.3-15.6

16

Property

Unit

HMSN1000

HMSN2000

HMSN3000

HMSN4000

Thermal Conductivity @ 20°C

W/mK

25

24

25

28

Thermal Shock Parameter R1

K

558

748

590-620

700

Thermal Shock Parameter R2

W/m

14

18

15

19

CTE1 25°C ➞ 250°C

10-6/K

1.9

1.9

1.9

1.9

CTE1 25°C ➞ 1000°C

10-6/K

3.2

3.2

3.2

3.2

Maximum Temperature (Inert) 2

°C

1400

1400

1400

1400

Maximum Temperature (Oxidizing) 2

°C

1200

1200

1200

1200

Property

Unit

HMSN1000

HMSN2000

HMSN3000

HMSN4000

Volume Resistivity @ 25°C

ohm-cm

1014

1014

1014

1012

Dielectric Strength DC @ 25°C

kV/mm

19

19

19

19

Dielectric Constant

1 MHz

8

8

8

7

Silicon Nitride Material Grades

HMSN1000 is produced through a gas over-pressure sintering technique, which is widely recognized for enabling the manufacture of high-strength silicon nitride parts with intricate shapes. The process starts with a silicon nitride powder blend that includes sintering additives—such as yttria, magnesium oxide, or alumina—to create a liquid phase during sintering, as well as binders to enhance the structural integrity of the pre-sintered form. After shaping the powder into the desired geometry and performing any necessary green machining, the components are densified in a nitrogen-pressurized furnace. This environment ensures proper consolidation while minimizing material loss due to evaporation or decomposition of silicon, nitrogen, and the additive elements.

Common Uses

  • Components for aerospace systems
  • Rolling and sliding elements in bearing units
  • High-durability parts for internal combustion engines
  • Tools and accessories for casting and metal processing
  • Structural parts in mechanical assemblies
  • Biocompatible elements for medical devices

HMSN2000 is manufactured using a hot pressing technique, where silicon nitride powder is compacted under high pressure and elevated temperature simultaneously. This method relies on specialized equipment, including precision dies and uniaxial presses. The result is a dense ceramic with outstanding strength and durability. However, the process is best suited for forming basic geometries due to the limitations of the equipment. Since components cannot be machined in the pre-sintered (green) state, all post-processing must be done through diamond grinding, which is both time-consuming and costly. As a result, this method is generally reserved for small-scale production of straightforward parts where premium material performance is required.

Common Uses

  • Structural parts in aircraft and spacecraft systems
  • Equipment and piping components in chemical processing industries
  • Friction-resistant elements for engines
  • Tools and wear parts used in metal casting environments
  • Load-bearing and precision parts in industrial machinery
  • Specialized pieces in medical and dental instruments

HMSN3000 utilizes the Hot Isostatic Pressing (HIP) process, where silicon nitride powder is compacted under both high pressure and high temperature. The material is placed in a chamber that is pressurized with inert gas, subjecting the component to uniform pressure from all sides at up to 2000 bar while it is simultaneously heated. This method helps to remove any residual porosity or defects during the sintering process, resulting in a material with a density close to its theoretical maximum. While HIP significantly improves the mechanical properties, durability, and overall reliability of the material, the high cost and complexity of the process limit its use to highly specialized applications.

Common Uses

  • Components for aerospace and defense industries
  • Precision bearing applications, especially in high-performance environments
  • Equipment and components in chemical processing and industrial plants
  • Engine parts subjected to extreme wear and thermal stress
  • Foundry tools and wear-resistant components
  • High-performance parts for mechanical engineering systems
  • Medical components requiring high strength and biocompatibility

HMSN4000 is produced through an extruded gas over-pressure sintering process, where silicon nitride powder is blended with sintering additives, such as yttria, magnesium oxide, and/or alumina, to facilitate liquid-phase sintering. Additionally, binders are incorporated to enhance the mechanical properties of the green ceramic structure. The extrusion process helps form the material into the desired shape, and the parts are then subjected to gas over-pressure sintering in a controlled environment. This method ensures uniform density and superior mechanical performance, making it ideal for high-performance applications.

Common Uses

  • Aerospace industry components
  • Bearings used in high-performance machinery
  • Equipment for chemical plants and industrial processing
  • Wear-resistant parts for engines
  • Components used in foundry operations
  • Parts for mechanical engineering systems
  • Medical-grade components for high-precision instruments

Silicon Nitride Ceramic Machining

Silicon Nitride Ceramic Machining

Silicon nitride can be machined in green, biscuit, or fully sintered forms, each with different machining properties. In green or biscuit states, it is easier to shape into complex forms, but the material shrinks about 20% during sintering, affecting dimensional accuracy. For tight tolerances, fully sintered silicon nitride must be machined using diamond tools, a precise but costly process due to the material’s hardness and toughness.

Machining Methods and Considerations:

  • Green or Biscuit Machining: Easier to machine into complex shapes but lacks final dimensional accuracy.
  • Sintering Shrinkage: The material shrinks approximately 20% during the sintering process, affecting post-sintering dimensions.
  • Tight Tolerances: For precise dimensions, post-sintered material must be machined using diamond tools.
  • Diamond Grinding: This technique involves the use of diamond-coated tools or wheels to abrade the material and achieve the desired shape.
  • Cost and Time: Machining fully dense silicon nitride is a slow, expensive process due to the hardness and toughness of the material.

Silicon Nitride Ceramic Packaging

Silicon nitride ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.

ceramic products packing HM

Get A Quote

We will check and get back to you in 24 hours

To customize your silicon nitride substrate, please provide us with the following information:

  • Dimensions : Length, Width, Thickness, etc.
  • Hole/slot requirements : Specify the size and position of holes and slots or other features.
  • Tolerances : Specify the required tolerances.
  • Purity  of the material
  • Temperature requirements : Specify the maximum operating temperature.
  • Electrical properties : Insulation resistance, dielectric strength, etc.
  • Application : Please indicate the intended application or industry to help determine the specific type.
  • Surface finishes : Polished, rough, etc.
  • Quantity  of the products you need
  • Alternatively, you can provide a  drawing  with your specifications.

Once we have this information, we will be able to provide you with a quote within 24 hours.

We carry a wide variety of silicon nitride ceramic products in stock, and for these, there is generally no minimum order requirement. However, for custom orders, we typically set a minimum order value of $200. The lead time for stock items is usually 1-2 weeks, while custom orders usually take 3-4 weeks, depending on the specifics of the order.

Yes, they support multilayer metallization and are compatible with common circuit materials, allowing for compact, high-performance packaging.

Yes, they have excellent thermal shock resistance, withstanding cycles of extreme temperatures without cracking or degrading.

Advanced Ceramic Hub, established in 2016 in Colorado, USA, is a specialized supplier and manufacturer of graphene products. With extensive expertise in supply and export, we offer competitive pricing and customized solutions tailored to specific requirements, ensuring outstanding quality and customer satisfaction. As a professional provider of ceramics, refractory metals, specialty alloys, spherical powders, and various advanced materials, we serve the research, development, and large-scale industrial production needs of the scientific and industrial sectors.

Silicon Nitride Substrate

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