Pyrolytic Boron Nitride Crucible

Pyrolytic Boron Nitride Crucible

Pyrolytic Boron Nitride Crucible is a high-purity and high-performance ceramic material. Unlike conventional hot-pressed boron nitride, it is produced through chemical vapor deposition (CVD) under vacuum conditions, using ammonia and boron halides without the need for traditional hot-press sintering or sintering agents. It offers ultra-high purity (up to 99.999%), exceptional high-temperature resistance (up to 2000℃), corrosion resistance, thermal conductivity, and electrical insulation. It is ideal for semiconductor crystal growth, high-temperature melting, and thin film preparation. Advanced Ceramics Hub can customize high-quality pyrolytic boron nitride crucibles for various application processes according to specific requirements, including PBN OLED Crucible, PBN MBE Crucible, PBN VGF Crucible, and PBN LEC Crucible.

Pyrolytic Boron Nitride OLED Crucible

The PBN OLED Crucible is a type of PBN crucible used in OLED and CIGS vapor deposition technologies. It features ultra-high purity, chemical inertness, excellent high-temperature performance, and thermal stability, making it widely used in metal and semiconductor vapor deposition processes.

Specification	Inner Diameter (mm)	Lip Diameter (mm)	Height (mm)
300cc	55	70	160
500cc	55	82	190
580cc	62	84	186
700cc	61	85	240
1200cc	78	115	240

Pyrolytic Boron Nitride MBE Crucible

The PBN MBE Crucible is a high-performance crucible used in the Molecular Beam Epitaxy (MBE) process. It features ultra-high purity, chemical inertness, and excellent high-temperature stability, allowing it to withstand high temperatures during the MBE process without releasing gases or undergoing chemical reactions.

MBE equipment	Specification	Inner Diameter  (mm)	Lip Diameter (mm)	Height (mm)
Veeco	125cc	37	>55	118
Veeco	500cc	100	130	160
Veeco	1700cc	130	160	290
Veeco	3700cc	180	210	300
Riber	BN-100L	13	27	77
Riber	BN-125L	20	32	89
Riber	BN-135L	24	37	89
Riber	200cc	68	84	156
Note	The dimensions and shapes can be customized according to specific requirements.

Pyrolytic Boron Nitride VGF Crucible

The VGF crucible is a container used in the Vertical Gradient Freezing (VGF) technique for synthesizing crystals such as GaAs, InP, CZGaP, and Ge. PBN VGF crucibles can withstand high temperatures and provide a stable thermal environment, allowing the crystal to grow in a controlled manner from the bottom upwards. This results in single crystals with low defect density and high uniformity.

Catalog No	Application	Inside Diameter	Height	Thickness
BV-2	VGF	2″	10″	0.035″
BV-3	VGF	3″	10″	0.035″
BV-4	VGF	4″	8″	0.035″
BV-5	VGF	5″	8″	0.04″
BV-6	VGF	6″	7″	0.04″
BV-8	VGF	8″	20″	0.08″

Pyrolytic Boron Nitride LEC Crucible

The PBN LEC crucible is a high-performance ceramic container specifically designed for the Liquid Encapsulated Czochralski (LEC) method, primarily used for growing compound semiconductor single crystals such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). The exceptional chemical stability and corrosion resistance of the PBN LEC crucible ensure that it is not eroded by the melt or encapsulants while supporting the slow extraction of the crystal from the melt to form high-quality single crystals.

Catalog No	Application	Inside Diameter	Height	Thickness
BL-3	LEC	3″	3″	0.03″
BL-4	LEC	4″	4″	0.035″
BL-5	LEC	5″	5″	0.035″
BL-6	LEC	6″	6″	0.04″
BL-7	LEC	7″	7″	0.04″
BL-8	LEC	8″	8″	0.04″
BL-14	LEC	14″	14″	0.08″

Pyrolytic Boron Nitride Crucible Available Specifications

Code: PBN-C1-12 Capacity:1 cm³	Code: PBN-C1-14 Capacity:1 cm³	Code: PBN-C1-20 Capacity: 1.5 cm³	Code: PBN-C2-16 Capacity: 2cm³
Code: PBN-C2-22 Capacity: 2 cm³	Code: PBN-C5-16 Capacity: 5 cm³	Code: PBN-C5-27 Capacity: 5 cm³	Code: PBN-C5-29 Capacity:5 cm³
Code: PBN-C8-27 Capacity: 8 cm³	Code: PBN-C10-22 Capacity: 10 cm³	Code: PBN-C12-36 Capacity: 12 cm³	Code: PB-C12-37 Capacity: 12 cm³
Code: PBN-C16-36 Capacity: 16 cm³	Code: PBN-C25-33 Capacity: 25 cm³	Code: PBN-C25-51 Capacity: 25 cm³	Code: PBN-C35-34 Capacity: 35 cm³
Code: PBN-C40-51 Capacity: 40 cm³	Code: PBN-C60-54 Capacity: 60 cm³	Code: PBN-C60-37 Capacity: 60cm³	Code: PBN-C70-60 Capacity: 70 cm³
Code: PBN-C75-77 Capacity: 75 cm³	Code: PBN-C80-54 Capacity: 80 cm³	Code: PBN-C82-71 Capacity: 82 cm³	Code: PBN-C85-41 Capacity: 85 cm³
Code: PBN-C125-54 Capacity: 125 cm³	Code: PBN-C130-54 Capacity: 130 cm³	Code: PBN-C150-60 Capacity: 150 cm³	Code: PBN-C155-60 Capacity: 155 cm³
Code: PBN-C160-60 Capacity: 160 cm³	Code: PBN-C200-84 Capacity : 200 cm³	Code: PBN-C200-58 Capacity: 200 cm³	Code: PBN-C200-102 Capacity: 200 cm³
Code: PBN-C420-84 Capacity : 420 cm³

Pyrolytic Boron Nitride Crucible Advantages

• High purity (99.99%-99.999%)
• High density (>2.12 g/cm³)
• No gas release at high temperatures
• Uniform thickness, excellent heating consistency
• Outstanding thermal conductivity and thermal shock resistance
• High interlayer strength, easy to clean, reusable
• Chemically inert, does not react with acids, alkalis, salts, or organic solvents at high temperatures

Pyrolytic Boron Nitride Crucible Applications

• Semiconductor Crystal Growth: PBN crucibles are ideal vessels for growing III-V compound semiconductor crystals (e.g., gallium arsenide GaAs, indium phosphide InP, and gallium nitride GaN) in processes such as Molecular Beam Epitaxy (MBE) and Liquid Phase Epitaxy (LPE).
• High-temperature Melting: PBN crucibles are highly favored for melting precious metals (e.g., gold, silver, platinum) or specialty alloys due to their non-reactivity with most molten metals.
• Thin Film Material Preparation: PBN crucibles are commonly used as evaporation source vessels in vacuum or thermal evaporation systems to prepare high-quality thin film materials. They are widely applicable in optical coatings and electronic device manufacturing.